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Dong Kim Phones & Addresses

  • Urbana, IL
  • Sunnyvale, CA
  • San Jose, CA
  • Austin, TX

Professional Records

License Records

Dong Chol Kim

License #:
2705047051 - Expired
Category:
Contractor
Issued Date:
Oct 14, 1998
Expiration Date:
Oct 31, 2000
Type:
Class C

Dong Soo Kim

License #:
2705114080 - Expired
Category:
Contractor
Issued Date:
Mar 26, 2007
Expiration Date:
Mar 31, 2009
Type:
Class C

Dong Su Kim

License #:
6398 - Expired
Category:
Asbestos
Issued Date:
Oct 18, 2002
Effective Date:
Apr 5, 2004
Expiration Date:
Oct 18, 2003
Type:
Asbestos Worker

Dong Hoon Kim Md

License #:
16936 - Expired
Category:
Medicine
Issued Date:
Mar 6, 1985
Effective Date:
May 22, 1987
Type:
Physician

Dong Uk Kim

License #:
MT026081T - Expired
Category:
Medicine
Type:
Graduate Medical Trainee

Medicine Doctors

Dong Kim Photo 1

Dong S. Kim

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Specialties:
Internal Medicine - Geriatrics
Work:
New Start Well Being Clinic
11441 Heacock St STE F, Moreno Valley, CA 92557
(951) 243-8000 (phone), (951) 243-9707 (fax)

Dong S Kim MD
3975 Jackson St STE 206, Riverside, CA 92503
(951) 243-8000 (phone), (951) 243-9707 (fax)
Education:
Medical School
Kyunghee Univ, Coll of Med, Dong Dae Moonka, Seoul, So Korea
Graduated: 1985
Procedures:
Arthrocentesis
Cardiac Stress Test
Continuous EKG
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Hearing Evaluation
Skin Tags Removal
Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding
Acne
Acute Bronchitis
Acute Pharyngitis
Acute Sinusitis
Languages:
English
Korean
Spanish
Description:
Dr. Kim graduated from the Kyunghee Univ, Coll of Med, Dong Dae Moonka, Seoul, So Korea in 1985. He works in Riverside, CA and 1 other location and specializes in Internal Medicine - Geriatrics. Dr. Kim is affiliated with Parkview Community Hospital Medical Center and Riverside Community Hospital.
Dong Kim Photo 2

Dong H. Kim

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Specialties:
Surgery , Neurological
Work:
UT PhysiciansMischer Neuroscience Institute At Memorial Hermann
6400 Fannin St STE 2800, Houston, TX 77030
(713) 704-7100 (phone), (713) 704-7150 (fax)

Mischer Neuroscience Associates
929 Gessner Rd STE 2410, Houston, TX 77024
(346) 800-5260 (phone), (713) 242-4412 (fax)
Education:
Medical School
University of California, San Francisco School of Medicine
Graduated: 1990
Procedures:
Craniotomy
Lumbar Puncture
Spinal Cord Surgery
Spinal Fusion
Spinal Surgery
Conditions:
Intervertebral Disc Degeneration
Languages:
English
Spanish
Description:
Dr. Kim graduated from the University of California, San Francisco School of Medicine in 1990. He works in Houston, TX and 1 other location and specializes in Surgery , Neurological. Dr. Kim is affiliated with Memorial Hermann Texas Medical Center.
Dong Kim Photo 3

Dong S. Kim

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Specialties:
Internal Medicine
Work:
Dong Suk Kim MD
9669 Kenton Ave STE 602, Skokie, IL 60076
(847) 410-8442 (phone), (847) 410-8443 (fax)
Education:
Medical School
Rosalind Franklin University/ Chicago Medical School
Graduated: 1996
Procedures:
Cardiac Stress Test
Conditions:
Abnormal Vaginal Bleeding
Acute Bronchitis
Acute Pancreatitis
Acute Pharyngitis
Acute Sinusitis
Languages:
English
Korean
Description:
Dr. Kim graduated from the Rosalind Franklin University/ Chicago Medical School in 1996. She works in Skokie, IL and specializes in Internal Medicine. Dr. Kim is affiliated with Northshore University HealthSystem.
Dong Kim Photo 4

Dong S. Kim

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Specialties:
Internal Medicine, Family Medicine
Work:
Medicine Pediatrics
6500 N Fwy STE 116, Houston, TX 77076
(713) 697-0041 (phone)
Education:
Medical School
Pusan Natl Univ, Coll of Med, Pusan, So Korea
Graduated: 1967
Conditions:
Bronchial Asthma
Diabetes Mellitus (DM)
Disorders of Lipoid Metabolism
Hypertension (HTN)
Migraine Headache
Languages:
English
Korean
Spanish
Description:
Dr. Kim graduated from the Pusan Natl Univ, Coll of Med, Pusan, So Korea in 1967. He works in Houston, TX and specializes in Internal Medicine and Family Medicine.
Dong Kim Photo 5

Dong W. Kim

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Specialties:
Endocrinology, Diabetes & Metabolism, Diabetes
Work:
Boston Medical Center Endocrine Nutrition & Diabetes Clinic
732 Harrison Ave FL 2, Boston, MA 02118
(617) 638-7470 (phone), (617) 638-7449 (fax)
Education:
Medical School
Hanyang Univ, Coll of Med, Sungdung Ku, Seoul, So Korea
Graduated: 2002
Conditions:
Anxiety Dissociative and Somatoform Disorders
Constipation
Diabetes Mellitus (DM)
Disorders of Lipoid Metabolism
Hypertension (HTN)
Languages:
Arabic
English
Spanish
Description:
Dr. Kim graduated from the Hanyang Univ, Coll of Med, Sungdung Ku, Seoul, So Korea in 2002. He works in Boston, MA and specializes in Endocrinology, Diabetes & Metabolism and Diabetes.
Dong Kim Photo 6

Dong M. Kim

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Specialties:
Podiatric Medicine
Work:
Landmark Foot & Ankle Center
5249 Duke St STE 212, Alexandria, VA 22304
(703) 370-2313 (phone), (703) 370-2490 (fax)
Procedures:
Hallux Valgus Repair
Conditions:
Hallux Valgus
Plantar Fascitis
Tinea Pedis
Languages:
English
Description:
Dr. Kim works in Alexandria, VA and specializes in Podiatric Medicine. Dr. Kim is affiliated with Inova Alexandria Hospital and Inova Mount Vernon Hospital.
Dong Kim Photo 7

Dong H. Kim

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Specialties:
Neonatal-Perinatal Medicine
Work:
PIH Health Hospital NICU
11500 Brookshire Ave, Downey, CA 90241
(562) 904-5573 (phone), (562) 904-4452 (fax)
Education:
Medical School
Albany Medical College
Graduated: 2002
Languages:
English
Korean
Description:
Dr. Kim graduated from the Albany Medical College in 2002. He works in Downey, CA and specializes in Neonatal-Perinatal Medicine. Dr. Kim is affiliated with PIH Health Hospital Downey and Whittier Hospital Medical Center.
Dong Kim Photo 8

Dong Y. Kim

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Specialties:
Anesthesiology
Work:
Seven Hills Gastroenterology
3256 S Pne Ave STE B, Ocala, FL 34471
(352) 401-1919 (phone), (352) 401-1870 (fax)
Education:
Medical School
Seoul Natl Univ, Coll of Med, Chongno Ku, Seoul, So Korea
Graduated: 1971
Languages:
English
Spanish
Description:
Dr. Kim graduated from the Seoul Natl Univ, Coll of Med, Chongno Ku, Seoul, So Korea in 1971. He works in Ocala, FL and specializes in Anesthesiology. Dr. Kim is affiliated with Munroe HMA Hospital LLC, Ocallaghan Regional Medical Center and West Marion Community Hospital.

Lawyers & Attorneys

Dong Kim Photo 9

Dong Won Kim - Lawyer

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Licenses:
New York - Due to reregister within 30 days of birthday 2010
Education:
Harvard Law School
Dong Kim Photo 10

Dong Hyun Kim - Lawyer

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Licenses:
California - Active 2007
Education:
Whittier College School of Law
Dong Kim Photo 11

Dong Chul Kim - Lawyer

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Address:
Cleary Gottlieb Steen & Hamilton LLP
(253) 237-28xx (Office)
Licenses:
New York - Currently registered 2006
Dong Kim Photo 12

Dong Kim - Lawyer

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ISLN:
1000012082
Admitted:
2007
University:
Whittier Coll SOL; CA

Public records

Vehicle Records

Dong Kim

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Address:
9420 Castle Pne Dr, Austin, TX 78717
VIN:
JHLRE48507C029445
Make:
HONDA
Model:
CR-V
Year:
2007

Dong S Kim

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Address:
5713 Sunset Rdg, Austin, TX 78735
VIN:
2T2HK31U37C028435
Make:
LEXU
Model:
RX 3
Year:
2007

Resumes

Resumes

Dong Kim Photo 13

Senior Consultant Technology Services At Deloitte Consulting

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Position:
Senior Consultant at Deloitte Consulting
Location:
Los Angeles, California
Industry:
Information Technology and Services
Work:
Deloitte Consulting since Aug 2011
Senior Consultant
Skills:
Business Analysis
Cross-functional Team Leadership
Management Consulting
Process Improvement
Project Management
Product Management
IT Strategy
Program Management
Dong Kim Photo 14

Dong Kim

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Position:
Director, Corporate Development & Strategy at Onyx Pharmaceuticals
Location:
Zürich Area, Switzerland
Industry:
Biotechnology
Work:
Onyx Pharmaceuticals - Zug, Switzerland since Sep 2011
Director, Corporate Development & Strategy
Education:
University of California, Berkeley
University of Michigan - Stephen M. Ross School of Business
Dong Kim Photo 15

Resident Engineer At Panasonic Automotive Systems

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Position:
SE Team at Panasonic Automotive Systems
Location:
Novi, Michigan
Industry:
Automotive
Work:
Panasonic Automotive Systems since Jan 2005
SE Team
Dong Kim Photo 16

Dong Kim

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Location:
United States
Dong Kim Photo 17

Dong Kim

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Location:
United States
Dong Kim Photo 18

Dong Kim

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Location:
United States
Dong Kim Photo 19

Dong Kim

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Location:
United States
Dong Kim Photo 20

Dong Kim

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Dong Kim
Owner
Sunday Kyocharo Korean News
Newspapers: Publishing, or Publishing and Pri...
1260 B St Ste 325, Hayward, CA 94541
Dong Kim
Professional Engineer
Sanmina SCI Corp
Printed Circuit Boards
60 E Plumeria Dr Bldg 2, San Jose, CA 95134
Dong Kim
Software Programmer
Electronic Arts Inc.
Prepackaged Software
209 Redwood Shores Pkwy, Redwood City, CA 94065
Mr. Dong K. Kim
Owner
Kim's Appliance
Appliances - Major - Parts & Supplies
4070 Mera St, Oakland, CA 94601
(510) 436-5382
Dong Kim
Owner
Sunday Kyocharo Korean News
Newspapers: Publishing, or Publishing and Pri...
1260 B St Ste 325, Hayward, CA 94541
Dong Kim
Professional Engineer
Sanmina SCI Corp
Printed Circuit Boards
60 E Plumeria Dr Bldg 2, San Jose, CA 95134
Dong Kim
Software Programmer
Electronic Arts Inc.
Prepackaged Software
209 Redwood Shores Pkwy, Redwood City, CA 94065
Dong K. Kim
Owner
Pro Alignment & Auto Service
Automotive Repair
501 Old County Rd, San Carlos, CA 94070
(650) 802-8777
Dong K. Kim
President
Csc Lab, Inc
Manufactures Pressed and Blown Glass Ophthalmic Goods Optical Instruments and Lenses · Mfg Pressed/Blown Glass Mfg Ophthalmic Goods Mfg Optical Instruments/Lenses
180 Westgate Dr, Watsonville, CA 95076
PO Box 50002, Watsonville, CA 95077
(831) 426-7423
Dong K. Kim
President
Microcoating Laboratory, Inc
Mfg Ophthalmic Goods
165 Dubois St, Santa Cruz, CA 95060
(831) 757-5220
Dong H. Kim
President
Active Sign Inc
General Contractor Specializing In Electrical Signs
1365 E Taylor St, San Jose, CA 95133
(408) 297-6640

Publications

Isbn (Books And Publications)

International Korean Adoption: A Fifty-Year History of Policy and Practice

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Author

Dong Soo Kim

ISBN #

0789030640

International Korean Adoption: A Fifty-year History of Policy and Practice

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Author

Dong Soo Kim

ISBN #

0789030659

Korean Women in a Struggle for Humanization

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Author

Dong Soo Kim

ISBN #

0932014003

Four Contemporary Plays

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Author

Dong Wook Kim

ISBN #

0761837035

The Year Book of Neurology and Neurosurgery 2007

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Author

Dong H. Kim

ISBN #

0323046746

Us Patents

Method Of Forming Trench Isolation Without Grooving

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US Patent:
6787409, Sep 7, 2004
Filed:
Nov 26, 2002
Appl. No.:
10/305464
Inventors:
Hua Ji - San Jose CA
Dong Jun Kim - San Jose CA
Jin-Ho Kim - San Jose CA
Chuck Jang - Fremont CA
Assignee:
Mosel Vitelic, Inc. - Hsin Chu
International Classification:
H01L 218238
US Classification:
438221, 438296, 438424, 438426, 438431, 438435
Abstract:
A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

Corner Protection To Reduce Wrap Around

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US Patent:
6864148, Mar 8, 2005
Filed:
Sep 5, 2003
Appl. No.:
10/655705
Inventors:
Chia-Shun Hsiao - Cupertino CA, US
Dong Jun Kim - San Jose CA, US
Assignee:
Mosel Vitelic, Inc. - Hsin Chu
International Classification:
H01L021/76
H01L021/3205
H01L021/31
US Classification:
438400, 438424, 438595, 438780
Abstract:
A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.

Trench Isolation Without Grooving

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US Patent:
6924542, Aug 2, 2005
Filed:
Jul 29, 2004
Appl. No.:
10/901948
Inventors:
Hua Ji - San Jose CA, US
Dong Jun Kim - San Jose CA, US
Jin-Ho Kim - San Jose CA, US
Chuck Jang - Fremont CA, US
Assignee:
ProMos Technologies, Inc. - Hsin Chu
International Classification:
H01L029/00
H01L021/8238
US Classification:
257501, 257506, 257510, 257513, 438221, 438296, 438426, 438435
Abstract:
A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

Corner Protection To Reduce Wrap Around

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US Patent:
7196381, Mar 27, 2007
Filed:
Jan 31, 2005
Appl. No.:
11/048668
Inventors:
Chia-Shun Hsiao - Cupertino CA, US
Dong Jun Kim - San Jose CA, US
Assignee:
Promos Technologies Pte. Ltd. - Districentre
International Classification:
H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119
US Classification:
257374, 257397, 257510
Abstract:
A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.

Substrate Isolation In Integrated Circuits

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US Patent:
7358149, Apr 15, 2008
Filed:
Jul 29, 2005
Appl. No.:
11/193150
Inventors:
Daniel Wang - San Jose CA, US
Chunchieh Huang - Fremont CA, US
Dong Jun Kim - San Jose CA, US
Assignee:
ProMOS Technologies, Inc. - Hsin-Chu
International Classification:
H01L 21/425
US Classification:
438433, 438525, 257E21551
Abstract:
Substrate isolation trench () are formed in a semiconductor substrate (). Dopant (e. g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric () faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

Substrate Isolation In Integrated Circuits

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US Patent:
7387942, Jun 17, 2008
Filed:
Dec 9, 2003
Appl. No.:
10/732616
Inventors:
Daniel Wang - San Jose CA, US
Chunchieh Huang - Fremont CA, US
Dong Jun Kim - San Jose CA, US
Assignee:
ProMOS Technologies Inc. - Hsin-Chu
International Classification:
H01L 21/425
H01L 21/762
US Classification:
438433, 438524, 438525, 257E21345
Abstract:
Substrate isolation trench () are formed in a semiconductor substrate (). Dopant (e. g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric () faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

Integrated Circuit Assembly Having Vented Heat-Spreader

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US Patent:
8258013, Sep 4, 2012
Filed:
Feb 12, 2010
Appl. No.:
12/705441
Inventors:
Kumar Nagarajan - San Jose CA, US
S. Gabriel R. Dosdos - San Jose CA, US
Dong W. Kim - San Jose CA, US
Kong W. Lee - San Jose CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H01L 23/10
H01L 21/00
US Classification:
438115, 257678, 257704, 438106
Abstract:
An integrated circuit package assembly includes a substrate, a semiconductor die having opposing first and second surfaces, and a head-spreader. The semiconductor die is mounted on the substrate with the first surface facing the substrate. The heat-spreader includes a central region thermally coupled to the second surface of the semiconductor die, a flange region mounted on the substrate, and a side wall region between the central and flange regions. A cavity is formed between the heat-spreader, the substrate, and the semiconductor die. The heat-spreader has at least one vent extending from the cavity through the heat-spreader.

Integrated Circuit Package And Method Of Forming An Integrated Circuit Package

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US Patent:
8362609, Jan 29, 2013
Filed:
Oct 27, 2009
Appl. No.:
12/607019
Inventors:
S. Gabriel R. Dosdos - San Jose CA, US
Dong Wook Kim - San Jose CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H01L 23/04
US Classification:
257730, 257690, 257704, 257E21499, 438121
Abstract:
An integrated circuit package is described. The integrated circuit package comprises a substrate having a plurality of sides, where each pair of adjacent sides forms a corner; a die coupled to a first surface of the substrate; a lid having a first portion positioned over the die and a plurality of foot portions, each foot portion of the plurality of foot portions being coupled to the first surface of the substrate at a corresponding corner of the substrate, where a side of the integrated circuit package above the substrate and between two associated foot portions has an opening; and a plurality of contact elements coupled to a second surface of the substrate. A method of forming an integrated circuit package is also shown.
Dong Heng Kim from Urbana, IL, age ~57 Get Report