Search

Dong Kang Phones & Addresses

  • 3150 Rochambeau Ave, Bronx, NY 10467 (718) 655-0327
  • Elmsford, NY

Professional Records

License Records

Dong Sik Kang

License #:
2705075754 - Expired
Category:
Contractor
Issued Date:
May 6, 2003
Expiration Date:
May 31, 2011
Type:
Class A

Medicine Doctors

Dong Kang Photo 1

Dong H. Kang

View page
Specialties:
Internal Medicine
Work:
Mount Carmel Medical GroupMount Carmel Medical Group Hilliard
3617 Heritage Clb Dr, Hilliard, OH 43026
(614) 234-9777 (phone), (614) 234-9797 (fax)
Education:
Medical School
University of Toledo College of Medicine
Graduated: 1993
Procedures:
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Pulmonary Function Tests
Skin Tags Removal
Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding
Anemia
Anxiety Phobic Disorders
Attention Deficit Disorder (ADD)
Bipolar Disorder
Languages:
Chinese
English
French
Spanish
Description:
Dr. Kang graduated from the University of Toledo College of Medicine in 1993. She works in Hilliard, OH and specializes in Internal Medicine.
Dong Kang Photo 2

Dong Kyoo R. Kang

View page
Specialties:
Otolaryngology
Work:
Boys Town West Doge ClinicBoys Town National Research Hospital
555 N 30 St, Omaha, NE 68131
(402) 498-6540 (phone), (402) 498-6614 (fax)
Education:
Medical School
Boston University School of Medicine
Graduated: 1980
Languages:
Chinese
English
Korean
Spanish
Description:
Dr. Kang graduated from the Boston University School of Medicine in 1980. He works in Omaha, NE and specializes in Otolaryngology. Dr. Kang is affiliated with Boys Town National Research Hospital.

Resumes

Resumes

Dong Kang Photo 3

Postdoctoral Researcher At New Jersey Institute Of Technology

View page
Location:
Greater New York City Area
Industry:
Higher Education
Dong Kang Photo 4

Dong Kang

View page
Location:
United States
Dong Kang Photo 5

Dong Kang

View page
Location:
United States
Dong Kang Photo 6

Dong Kang

View page
Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Dong Kang
Owner
Broad Locksmiths
Repair Services · Locksmith
3 W Ruby Ave, Palisades Park, NJ 07650
(201) 943-4900
Dong J. Kang
President
DONG JIN FARM, CORP
Fruit & Vegetable Market
4901 New Utrect Ave, Brooklyn, NY 11219
4901 New Utrecht Ave, Brooklyn, NY 11219
(718) 435-6543
Dong Il Kang
MM
Kang's Auto, LC

Publications

Us Patents

Dt Capacitor With Silicide Outer Electrode And/Or Compressive Stress Layer, And Related Methods

View page
US Patent:
20150357402, Dec 10, 2015
Filed:
Aug 20, 2015
Appl. No.:
14/831487
Inventors:
- Armonk NY, US
Ricardo A. Donaton - Cortlandt Manor NY, US
Dong Hun Kang - Hopewell Junction NY, US
Herbert L. Ho - New Windsor NY, US
Rishikesh Krishnan - Painted Post NY, US
International Classification:
H01L 49/02
H01L 21/283
Abstract:
Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.

Dt Capacitor With Silicide Outer Electrode And/Or Compressive Stress Layer, And Related Methods

View page
US Patent:
20150357403, Dec 10, 2015
Filed:
Aug 20, 2015
Appl. No.:
14/831504
Inventors:
- Armonk NY, US
Ricardo A. Donaton - Cortlandt Manor NY, US
Dong Hun Kang - Hopewell Junction NY, US
Herbert L. Ho - New Windsor NY, US
Rishikesh Krishnan - Painted Post NY, US
International Classification:
H01L 49/02
Abstract:
A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.

Dt Capacitor With Silicide Outer Electrode And/Or Compressive Stress Layer, And Related Methods

View page
US Patent:
20150279925, Oct 1, 2015
Filed:
Apr 1, 2014
Appl. No.:
14/242092
Inventors:
- Armonk NY, US
Ricardo A. Donaton - Cortlandt Manor NY, US
Dong Hun Kang - Hopewell Junction NY, US
Herbert L. Ho - New Windsor NY, US
Rishikesh Krishnan - Painted Post NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 49/02
Abstract:
Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; enlarging a width of a lower portion of the deep trench to be wider than a width of the rest of the deep trench; epitaxially forming a compressive stress layer in the lower portion of the deep trench; forming a metal-insulator-metal (MIM) stack within the lower portion of the deep trench; and filling a remaining portion of the deep trench with a semiconductor. Alternatively to forming the compressive stress layer or in addition thereto, a silicide may be formed by co-deposition of a refractory metal and silicon.
Dong Cheon Kang from Bronx, NY, age ~65 Get Report