Dok Y Lee

20230096573, Mar 30, 2023

Sep 28, 2021

17/487877

- Dallas TX, US
Christopher Eric Brannon - Allen TX, US
William David French - San Jose CA, US
Dok Won Lee - Mountain View CA, US

H01L 43/12
H01L 43/02
H01L 21/306
G01R 33/09

Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.

20230052689, Feb 16, 2023

Jul 28, 2022

17/875840

- Dallas TX, US
Srinath Mathur Ramaswamy - Murphy TX, US
Dok Won Lee - Mountain View CA, US
Steven Howard - Plano TX, US

G01R 33/07
G01R 19/02
H02M 1/00

Current sensing techniques. In an example, a current sensing method includes: generating a first magnetic field measurement; generating a second magnetic field measurement; generating a frequency estimate of a current; calculating a root-mean-square (RMS) value of an estimated amplitude of the current; and generating a temperature estimate of an integrated circuit (IC) configured to perform the method. The method also includes generating a first weighting factor and a second weighting factor based on the frequency estimate, the RMS value, and the temperature estimate, the first weighting factor to control amplification of the first magnetic field measurement and the second weighting factor to control amplification of the second magnetic field measurement.

20210072327, Mar 11, 2021

Sep 9, 2019

16/565130

- Dallas TX, US
Benjamin Stassen COOK - Addison TX, US
Dok Won LEE - Mountain View CA, US
Keith Ryan GREEN - Prosper TX, US
Kenji OTAKE - Nagano, JP

G01R 33/00
G01R 33/07

A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a protective overcoat layer positioned above the surface of the substrate, and a sphere-shaped magnetic concentrator positioned above the protective overcoat layer. Instead of or in addition to the sphere-shaped magnetic concentrator, the structure may include an embedded magnetic concentrator positioned within the substrate and below the horizontal-type Hall sensor.

20210025948, Jan 28, 2021

Jul 24, 2019

16/521053

- Dallas TX, US
Benjamin Stassen COOK - Addison TX, US
Dok Won LEE - Mountain View CA, US
Keith Ryan GREEN - Prosper TX, US
Ricky Alan JACKSON - Richardson TX, US
William David FRENCH - San Jose CA, US

G01R 33/00
G01R 33/07

A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.