Chung S Lee

6534616, Mar 18, 2003

Apr 17, 2001

09/836815

Chung J. Lee - Fremont CA
Hui Wang - Fremont CA
Giovanni Antonio Foggiato - Morgan Hill CA

Quester Technology, Inc. - Fremont CA

C08G 7724

528 42, 528 31, 528 43, 528397, 528401, 25218211, 438780

Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp CâF and some hyperconjugated sp CâF bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

6663973, Dec 16, 2003

Dec 20, 1999

09/468378

Chung J. Lee - Fremont CA
Hui Wang - Fremont CA
Giovanni Antonio Foggiato - Morgan Hill CA

Canon, USA, Inc. - Lake Success NY

B32B 904

428447, 427489, 427515, 428450

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2. 0 to 2. 6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for 0. 18 m ICs, or when copper is used as conductor in future ICs.

6797343, Sep 28, 2004

Dec 20, 2001

10/028198

Chung J. Lee - Fremont CA

Dielectric Systems, Inc. - Fremont CA

B32B 2728

428 11, 428421, 428500, 526244, 526251

New precursors and processes are disclosed for making fluorinated, low dielectric constant â thin films that have higher dimensional stability and are more rigid than fluorinated poly (para-xylylenes). The fluorinated, low dielectric constant thin films can be prepared from reactions of an ethylenic-containing precursor with benzocyclobutane-, biphenyl- and/or dieneone-containing precursors. The fluorinated, low dielectric constant thin films are useful for fabrications of future 0. 13 m integrated circuits (ICs). Using fluorinated, low-dielectric constant thin films prepared according to this invention, the integrity of the dielectric, copper (Cu) and barrier metals, such as Ta, can be kept intact; therefore improving the reliability of the IC.

6825303, Nov 30, 2004

Feb 26, 2001

09/795217

Chung J. Lee - Fremont CA

Dielectric Systems, Inc. - Fremont CA

C08F 1220

526242, 5263481, 526346, 528244, 528401

New precursors and processes to generate fluorinated poly(para-xylylenes) (âPPXâ) and their chemically modified films suitable for fabrications of integrated circuits (âICsâ) of 0. 15 m are disclosed. The films so prepared have low dielectric constants (âââ) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.

6881447, Apr 19, 2005

Apr 4, 2002

10/116724

Chung J. Lee - Fremont CA, US
Atul Kumar - Fremont CA, US

Dielectric Systems, Inc. - Fremont CA

C23C016/56

4272556, 42725511, 42725521, 4272481, 427309, 526346, 118724, 118725

Preparation methods and stabilization processes for low k polymers that consist of spC—X and HC-spC—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20 C. to −50 C. to +20 C. to +50 C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20 C. to −50 C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

6962871, Nov 8, 2005

Mar 31, 2004

10/816205

Chung J. Lee - Fremont CA, US
Atul Kumar - Santa Clara CA, US

Dielectric Systems, Inc. - Fremont CA

H01L021/4763

438624, 438628

An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

6972030, Dec 6, 2005

Dec 13, 2002

10/318558

Don W. Lee - Glendale CA, US
Chung H. Lee - Glendale CA, US

A61F002/06

623 111

A method and apparatus for introducing a stent into a region of a major blood vessel within the human body in a manner which substantially reduces the risk of embolic material escaping to the vessel and causing a blockage at a downstream location. Additionally, the apparatus includes a uniquely designed stent delivery catheter having a central lumen through which a guide wire travels, the central lumen being provided with a valve means that is operable by the guide wire and when moved into a closed position by withdrawal of the guide wire, functions to prevent the flow of loose debris toward the proximal end of the catheter.

6997943, Feb 14, 2006

Feb 19, 2003

10/370367

Don W. Lee - Glendale CA, US
Chung H. Lee - Glendale CA, US

A61F 2/06

623 111, 606194

A method and apparatus for introducing a stent into a region of a major blood vessel within the human body in a manner which substantially reduces the risk of embolic material escaping to the vessel and causing a blockage at a downstream location. A uniquely designed stent delivery catheter includes a central lumen through which a guide wire travels. The central lumen is provided with a valve means that is operable by the guide wire and when moved into a closed position by withdrawal of the guide wire, functions to prevent the flow of loose debris toward the proximal end of the catheter.