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Chen H Lin

from Foster City, CA
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Also known as:
Chen Lin
Related to:
Jean C Lin, 57John S Lin, 69Iyuan Lin, 85Chien C Lin, 60Andy LinWei Lin, 56Wei Lin
Connected to:
Abby C Lin, 44Ai H Lin, 74Aidi Lin, 31Alisa Y Lin, 47Alyssa Lin, 39Amy LinAndrea Lin, 51Angelia Lin, 29Angelica B Lin, 52Anhua A Lin, 51

Chen Lin Phones & Addresses

  • Foster City, CA

Professional Records

Medicine Doctors

Chen Lin Photo 1

Chen Hsing Lin

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License Records

Chen Leon Lin

License #:
430732
Category:
Nurse Practitioner - Acute Care
Issued Date:
Jun 27, 2013
Type:
NURSE PRACTITIONER IN ACUTE CARE

Business Records

Name / Title
Company / Classification
Phones & Addresses
Chen Lin
Doctor Of Dental Surgery
Premier Dental Care
Offices and Clinics of Dentists
4466 Black Ave Ste G, Pleasanton, CA 94566
Chen Yang Lin
President
LIN'S JEWELRY COMPANY
888 Brannan St STE 192, San Francisco, CA 94103
Chen Chung Lin
Cyhc Real Estate, LLC
Real Estate Management
981 Oxford Dr, Los Altos, CA 94024
Chen Lin
GLOBAL VAPORS LLC
Chen Yang Lin
President
Jola Jewelry
Ret & Whol Jewelry
888 Brannan St, San Francisco, CA 94103
(415) 255-8626
Chen Wen Lin
EAST PACIFIC FINANCIAL SERVICES, LLC
Chen Lin
LIN'S CHINA BUFFET, INC
Chen Lin
CHEN ER CORP
Chen Lin
Doctor Of Dental Surgery
Premier Dental Care
Offices and Clinics of Dentists
4466 Black Ave Ste G, Pleasanton, CA 94566

Publications

Wikipedia References

Chen Lin Photo 10

Chen Lin

About:
Born:

31 January 1970 • Chongqing , People's Republic of China

Died:

31 October 2009 • Beijing , China

Work:
Position:

Chinese singer

Education:
Specialty:

Singer

Area of science:

Singing

Academic degree:

Bachelor Of Social Service

Skills & Activities:
Activity:

Musician committed suicide

Sport:

Floor

Chen Lin Photo 11

Chen Lin

About:
Born:

1543

Died:

1607

Work:

Chen Lin was dispatched in 1598 to help repulse the Japanese in Hideyoshi's Invasions of Korea with the Korean admiral Yi Sun-sin....

Education:
Area of science:

Campaigning

Skills & Activities:
Military rank:

Admiral

Chen Lin Photo 12

Chen Lin

About:
Born:

1977

Skills & Activities:
Activity:

Badminton

Chen Lin Photo 13

Chen Lin

About:
Born:

1979 • Zhuzhou, Hunan, P.R. China

Died:

31 May 2008 • Yingxiu, Sichuan, P.R. China

Work:

On May 31, Chen and four other colleagues from an Army aviation force group were flying No. 92734 helicopter to transport the wounded....

Education:

Zeng Qian, Chen Lin's wife, born in 1982, Chendu City, was employed as an operator in College of Sichuan Provincial Geological Serving and Drawing after she graduating from Chengdu University of science and engineering in 2004.

Skills & Activities:

On June 24, 2008, Chen Lin's ashes were brought back to his hometown in Hunan, and were buried in Hunan Revolutionary Martyrs' Park....

Chen Lin Photo 14

Chen Lin

Work:

Chen Lin ( painter ) " Chen Lin " (; ca. 1260ndash1320 ); was a China Landscape painting during the Yuan Dynasty ( 1271ndash1368 ).

Education:
Area of science:

Painting

Us Patents

Methods And Apparatus For Doping Engineering And Threshold Voltage Tuning By Integrated Deposition Of Titanium Nitride And Aluminum Films

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US Patent:
20190057863, Feb 21, 2019
Filed:
Aug 17, 2018
Appl. No.:
16/104352
Inventors:
- Santa Clara CA, US
PAUL F. MA - Santa Clara CA, US
WEI V. TANG - Santa Clara CA, US
WENYU ZHANG - San Jose CA, US
SHIH CHUNG CHEN - Cupertino CA, US
CHEN HAN LIN - Campbell CA, US
CHI-CHOU LIN - San Jose CA, US
YI XU - San Jose CA, US
YU LEI - Foster City CA, US
NAOMI YOSHIDA - Sunnyvale CA, US
LIN DONG - San Jose CA, US
SIDDARTH KRISHNAN - Newark CA, US
International Classification:
H01L 21/02
H01L 29/40
H01L 21/28
Abstract:
Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Small Gap Device System And Method Of Fabrication

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US Patent:
20190027347, Jan 24, 2019
Filed:
Jul 24, 2018
Appl. No.:
16/044215
Inventors:
- Berkeley CA, US
Igor Bargatin - Berkeley CA, US
Samuel M. Nicaise - Berkeley CA, US
Chen Lin - Berkeley CA, US
John Provine - Berkeley CA, US
International Classification:
H01J 45/00
Abstract:
A small-gap device system, preferably including two or more electrodes and one or more spacers maintaining a gap between two or more of the electrodes. A spacer for a small-gap device system, preferably including a plurality of legs defining a mesh structure. A method of spacer and/or small-gap device fabrication, preferably including: defining lateral features, depositing spacer material, selectively removing spacer material, separating the spacer from a fabrication substrate, and/or assembling the small-gap device.
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Chen H Lin from Foster City, CA Get Report