Bok Hee Kim

20140370711, Dec 18, 2014

Jun 18, 2013

13/920944

- Santa Clara CA, US
Jacob JANZEN - Pasadena CA, US
Deenesh PADHI - Sunnyvale CA, US
Bok Hoen KIM - San Jose CA, US

APPLIED MATERIALS, INC. - Santa Clara CA

H01L 21/027
H01L 21/3065

438702, 438781

Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.