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Bo Z Zheng

from Pleasanton, CA
Age ~62
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Also known as:
Bo J Zheng, Bo Z Ding, Bo Z Peijun
Related to:
Xueyan Zhang, 43Jeff Ding, 32Sarah Ding, 26Yu Yan, 61Sun Zheng, 34Degang Ding
Connected to:
Abby Zheng, 52Allen S Zheng, 29Audrey E Zheng, 29Billy Zheng, 29Catherine K Zheng, 54Da Zheng, 32Daihua Zheng, 67Dandan D Zheng, 71Danny D Zheng, 50Deborah Zheng, 29

Bo Zheng Phones & Addresses

  • Pleasanton, CA
  • 19766 Elisa Ave, Saratoga, CA 95070 (408) 996-3017
  • 20297 Sea Gull Way, Saratoga, CA 95070 (408) 996-3017
  • 1020 Riverside Dr #W, San Jose, CA 95125 (408) 996-3017
  • Mountain View, CA
  • Palo Alto, CA
  • Santa Clara, CA
  • Sunnyvale, CA

Resumes

Resumes

Bo Zheng Photo 1

Bo Zheng

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Location:
San Francisco, CA
Industry:
Semiconductors
Work:
Applied Materials Inc. since Nov 2006
senior member of technical staff
Applied Materials May 2002 - Oct 2006
senior technology manager
Applied Materials Nov 2000 - Apr 2003
technology manager
Education:
Santa Clara University 2006 - 2009
MBA, Finance State University of New York at Albany 1989 - 1994
Skills:
Semiconductors
Semiconductor Industry
Design of Experiments
Failure Analysis
Jmp
Product Engineering
Spc
Engineering Management
Ic
Cross Functional Team Leadership
Materials Science
Solar Energy
Analog
Cvd
Bo Zheng Photo 2

Bo Zheng

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Bo Zheng Photo 3

Scientist At Gsk

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Position:
Scientist at GSK
Location:
United States
Industry:
Pharmaceuticals
Work:
GSK
Scientist

Publications

Wikipedia

Zheng Bo

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Zheng Bo (simplified Chinese: ; traditional Chinese: ; pinyin: Zhng B; born November 26, 1983) is a male badminton player from Hunan, ...

Us Patents

Deposition Of Copper With Increased Adhesion

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US Patent:
6355106, Mar 12, 2002
Filed:
Nov 3, 2000
Appl. No.:
09/706321
Inventors:
Bo Zheng - San Jose CA
Ling Chen - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118697, 118696, 118715, 700 1, 700 90, 700 95, 427535, 427533, 427534, 427252, 427253
Abstract:
A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Chemical Vapor Deposition Of Copper Using Profiled Distribution Of Showerhead Apertures

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US Patent:
6410089, Jun 25, 2002
Filed:
Feb 24, 2000
Appl. No.:
09/513723
Inventors:
Xin Sheng Guo - Los Altos Hills CA
Keith Koai - Los Gatos CA
Ling Chen - Sunnyvale CA
Mohan K. Bhan - Cupertino CA
Bo Zheng - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1680
US Classification:
427250, 427252, 118715
Abstract:
A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

Showerhead With Reduced Contact Area

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US Patent:
6461435, Oct 8, 2002
Filed:
Jun 22, 2000
Appl. No.:
09/603117
Inventors:
Karl A. Littau - Palo Alto CA
Bevan Vo - Santa Clara CA
Salvador P. Umotoy - Antioch CA
Son N. Trinh - Cupertino CA
Ken Kaung Lai - Milpitas CA
Bo Zheng - San Jose CA
Ping Jian - San Jose CA
Siqing Lu - Sunnyvale CA
Anzhong Chang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118715, 118724, 118725
Abstract:
A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

Method And Associated Apparatus To Mechanically Enhance The Deposition Of A Metal Film Within A Feature

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US Patent:
6610189, Aug 26, 2003
Filed:
Jan 3, 2001
Appl. No.:
09/754499
Inventors:
Hougong Wang - Pleasanton CA
Bo Zheng - San Jose CA
Girish Dixit - San Jose CA
Fusen Chen - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C25D 500
US Classification:
205 88, 205 98, 205148, 204222, 204273
Abstract:
A method and associated apparatus of electroplating an object and filling small features. The method comprises immersing the plating surface into an electrolyte solution and mechanically enhancing the concentration of metal ions in the electrolyte solution in the features. In one embodiment, the mechanical enhancement comprises mechanically vibrating the plating surface. In another embodiment, the mechanical enhancement comprises mechanically vibrating the electrolyte solution. In a further embodiment, the mechanical enhancement comprises increasing the pressure applied to the electrolyte solution.

Ecp Gap Fill By Modulating The Voltate On The Seed Layer To Increase Copper Concentration Inside Feature

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US Patent:
6746591, Jun 8, 2004
Filed:
Oct 16, 2001
Appl. No.:
09/981508
Inventors:
Bo Zheng - San Jose CA
Renren He - Sunnyvale CA
Girish Dixit - San Jose CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
C25D 518
US Classification:
205104, 205102, 205103, 205118, 205123
Abstract:
A method and apparatus for electrochemically depositing a metal onto a substrate. The apparatus generally includes a head assembly having a cathode and a wafer holder disposed above the cathode. The apparatus further includes a process kit disposed below the head assembly, the process kit including an electrolyte container configured to receive and maintain a fluid electrolyte therein, and an anode disposed in the electrolyte container. The apparatus further includes a power supply in electrical communication with the cathode and the anode, the power supply being configured to provide a varying amplitude electrical signal to the anode and cathode. The method generally includes providing an electrolyte container configured to receive and maintain a fluid electrolyte therein, the electrolyte container having an anode disposed within the electrolyte container, providing a head assembly positioned above the electrolyte container, the head assembly including a wafer holder for supporting a wafer and a cathode, and positioning a wafer in the electrolyte container in contact with the fluid electrolyte, and applying a varying amplitude waveform to the cathode and anode in an electroplating process.

Method For Regulating The Electrical Power Applied To A Substrate During An Immersion Process

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US Patent:
6911136, Jun 28, 2005
Filed:
Apr 29, 2002
Appl. No.:
10/135546
Inventors:
Bo Zheng - San Jose CA, US
Rajeev Bajaj - Fremont CA, US
Zhonghui Alex Wang - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C25D021/12
US Classification:
205 82, 205 81, 205134
Abstract:
A method and apparatus for providing a uniform current density across an immersed surface of a substrate during an immersion process. The method includes the steps of determining a time varying area of an immersed portion of the substrate during the immersion process, and supplying a time varying current to the substrate during the immersion process, wherein the time varying current is proportional to the time varying area and is configured to provide a constant current density to the immersed portion of the substrate.

Method Of Application Of Electrical Biasing To Enhance Metal Deposition

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US Patent:
6913680, Jul 5, 2005
Filed:
Jul 12, 2000
Appl. No.:
09/614407
Inventors:
Bo Zheng - San Jose CA, US
Hougong Wang - Pleasanton CA, US
Girish Dixit - San Jose CA, US
Fusen Chen - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C25D005/18
US Classification:
205102, 205103, 205104, 205105
Abstract:
A method and associated apparatus includes depositing metal on a plating surface of an object immersed in an electrolyte solution prior to bulk deposition on the plating surface. In one aspect, the method further includes applying a voltage between an anode and the plating surface to enhance the concentration of metal ions in the electrolyte solution that is contained in a feature on the plating surface prior to the bulk deposition on the plating surface.

Method Of Annealing Metal Layers

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US Patent:
7109111, Sep 19, 2006
Filed:
Feb 11, 2002
Appl. No.:
10/074353
Inventors:
Zhonghui Alex Wang - Sunnyvale CA, US
Bo Zheng - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/44
US Classification:
438663, 438660
Abstract:
A method of annealing a metal layer on a substrate in a chamber is provided. The method comprises positioning a substrate with a metal layer thereon in a chamber, removing atmospheric gases from the chamber, providing process gas to the chamber, and annealing the metal layer at a temperature greater than about 80 degrees Celsius. Also provided is a method of forming a feature on a substrate. The method comprises depositing a dielectric layer on the substrate, forming at least one opening within the dielectric layer, depositing a metal layer in the opening, positioning the substrate in an annealing chamber, removing atmospheric gases from the annealing chamber, providing process gas to the annealing chamber, and annealing the metal layer at temperature greater than about 80 degrees Celsius.
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Bo Z Zheng from Pleasanton, CA, age ~62 Get Report