Allen Lu Phones & Addresses
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Elk Grove, CA
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3234 25Th St, San Francisco, CA 94110 (415) 939-1381
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South San Francisco, CA
Publications
Us Patents
Dual Trench Isolation Using Single Critical Lithographic Patterning
View pageUS Patent:
6849518, Feb 1, 2005
Filed:
May 7, 2002
Appl. No.:
10/141545
Inventors:
Krishna Parat - Palo Alto CA, US
Kiran Pangal - San Jose CA, US
Allen Lu - San Mateo CA, US
Kiran Pangal - San Jose CA, US
Allen Lu - San Mateo CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2176
US Classification:
438424
Abstract:
A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.
Dual Trench Isolation Using Single Critical Lithographic Patterning
View pageUS Patent:
6949801, Sep 27, 2005
Filed:
Sep 23, 2003
Appl. No.:
10/669825
Inventors:
Krishna Parat - Palo Alto CA, US
Kiran Pangal - San Jose CA, US
Allen Lu - San Mateo CA, US
Kiran Pangal - San Jose CA, US
Allen Lu - San Mateo CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L029/76
US Classification:
257374, 438427, 438241, 438424
Abstract:
A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.