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Ying Yu Phones & Addresses

  • Pleasanton, CA
  • Oakland, CA
  • Albany, CA
  • San Francisco, CA
  • Houston, TX
  • Lincolnwood, IL

Professional Records

License Records

Ying Yu

License #:
25624 - Active
Issued Date:
Apr 17, 2008
Expiration Date:
Jun 30, 2017
Type:
Certified Public Accountant

Ying Zhi Yu

License #:
000698
Category:
Acupuncture
Issued Date:
Mar 29, 1996
Type:
ACUPUNCTURE

Resumes

Resumes

Ying Yu Photo 1

Applied Engineer At Nvidia

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Position:
Applied Engineer at Nvidia
Location:
San Francisco Bay Area
Industry:
Computer Software
Work:
Nvidia since Apr 2010
Applied Engineer

University of Delaware Sep 2007 - Dec 2009
Research Assistant

ARSC(Arctic Region Supercomputing Center Jun 2009 - Aug 2009
Intern

ARSC(Arctic Region Supercomputing Center) Jun 2008 - Aug 2008
Intern

DESY(Deutsches Elektronen-Synchrotron) Dec 2006 - Jan 2007
Intern
Education:
University of Delaware 2007 - 2009
Master's degree
Chinese Academy of Sciences 2004 - 2007
M.S., Electrical and Computer Engineering
Qingdao University 2000 - 2004
B.S., Electronic and Information Science
Skills:
CUDA
Data Mining
Computer Architecture
High Performance Computing
Ying Yu Photo 2

Manager, Chemical Development At Onyx Pharmaceuticals

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Position:
Manager, Chemical Development at Onyx Pharmaceuticals
Location:
San Francisco Bay Area
Industry:
Biotechnology
Work:
Onyx Pharmaceuticals since Jan 2012
Manager, Chemical Development

Onyx Pharmaceuticals 2011 - Dec 2011
Senior Scientist, Chemical Development

Onyx Pharmaceuticals 2008 - 2011
Scientist II, Chemical Development

Theravance 2006 - 2008
Scientist

Eli Lilly 2004 - 2006
Postdoc Scientist
Education:
Emory University 1999 - 2004
Ph.D., Organic Chemistry
Ying Yu Photo 3

Design Engineer At Marvell Semiconductor

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Position:
Design Engineer at Marvell Semiconductor
Location:
San Francisco Bay Area
Industry:
Semiconductors
Work:
Marvell Semiconductor since Aug 2006
Design Engineer
Education:
University of Pittsburgh 2000 - 2006
Ph.D., ECE
Fudan University 1994 - 2000
BS and MS, EE
Ying Yu Photo 4

Student At University Of California, Berkeley

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Location:
San Francisco Bay Area
Industry:
Chemicals
Education:
University of California, Berkeley 2010 - 2014
Alameda High School 2006 - 2010
Interests:
piano, reading, badminton
Languages:
English
Cantonese
Mandarin Chinese
Ying Yu Photo 5

Scientist At Cell Genesys

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Position:
Senior Scientist at Merck Research Lab Palo Alto, Senior Scientist at Merck Palo Alto
Location:
San Francisco Bay Area
Industry:
Research
Work:
Merck Research Lab Palo Alto since 2009
Senior Scientist

Merck Palo Alto since 2009
Senior Scientist

Cell Genesys Jan 2006 - Oct 2008
scientist
Ying Yu Photo 6

Ying Yu

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Location:
San Francisco Bay Area
Industry:
Computer Software
Ying Yu Photo 7

Ying Yu

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Location:
United States

Publications

Us Patents

Apparatus For Aligning A Wafer

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US Patent:
6436192, Aug 20, 2002
Filed:
Jan 11, 2000
Appl. No.:
09/481055
Inventors:
Ling Chen - Sunnyvale CA
Joseph Yudovsky - Palo Alto CA
Ying Yu - Cupertino CA
Lawrence C. Lei - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118696, 118728, 118500
Abstract:
A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

Method And Apparatus For Directing Constituents Through A Processing Chamber

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US Patent:
6586343, Jul 1, 2003
Filed:
Jul 9, 1999
Appl. No.:
09/350817
Inventors:
Henry Ho - San Jose CA
Ying Yu - Cupertino CA
Steven A. Chen - Fremont CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2131
US Classification:
438758, 438778, 438786, 438787, 438791, 118719, 118900
Abstract:
A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.

Method Of Forming A Silicon Nitride Layer On A Substrate

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US Patent:
6645884, Nov 11, 2003
Filed:
Jul 9, 1999
Appl. No.:
09/350810
Inventors:
Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2102
US Classification:
438791, 438584, 438680, 438758, 438774, 438775
Abstract:
The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

Plasma Enhanced Cvd Low K Carbon-Doped Silicon Oxide Film Deposition Using Vhf-Rf Power

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US Patent:
6797643, Sep 28, 2004
Filed:
Oct 23, 2002
Appl. No.:
10/279367
Inventors:
Juan Carlos Rocha-Alvarez - Sunnyvale CA
Maosheng Zhao - Santa Clara CA
Ying Yu - Cupertino CA
Shankar Venkataraman - Santa Clara CA
Srinivas D. Nemani - Sunnyvale CA
Li-Qun Xia - Santa Clara CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2131
US Classification:
438758, 438622, 438623, 438767, 438790, 438633
Abstract:
A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.

Wafer Scrubbing Device Having Brush Assembly And Mounting Assembly Forming Spherical Joint

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US Patent:
6820298, Nov 23, 2004
Filed:
Apr 19, 2001
Appl. No.:
09/838959
Inventors:
John M White - Hayward CA
Ying Yu - Cupertino CA
Michael Sugarman - San Francisco CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B08B 104
US Classification:
15 77, 15 883, 15 211, 15179, 4033221, 403325
Abstract:
A brush mounting system for a wafer scrubbing device includes a brush mandrel and a mounting assembly on which the brush mandrel is mounted. The mounting assembly includes a mounting member adapted to be mounted to a wall of the wafer scrubbing device, and a bearing secured to the mounting member. A brush support is rotatably mounted on the bearing and has an outer end that includes a contact surface adapted to contact the brush mandrel. The contact surface has a spherical profile. The brush mandrel includes a corresponding contact surface having a spherical profile, so that the brush mandrel and the mounting assembly form a spherical joint at the point of contact.

Process For Preparing An Intermediate To Opioid Receptor Antagonists

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US Patent:
7932402, Apr 26, 2011
Filed:
Jul 15, 2008
Appl. No.:
12/218383
Inventors:
Pierre-Jean Colson - San Francisco CA,
Ying Yu - Sunnyvale CA,
Daniel D. Long - San Francisco CA,
Ioanna Stergiades - San Francisco CA,
Assignee:
Theravance, Inc. - San Francisco CA
International Classification:
C07D 209/52
US Classification:
548452
Abstract:
The invention provides an efficient method for preparing 3-endo-(8-azabicyclo[3. 2. 1]oct-3-yl)benzamide by hydrogenation, under controlled conditions, of an amino-protected 3-(8-azabicyclo[3. 2. 1]oct-2-en-3-yl)benzamide intermediate in which the amino-protecting group is removable by catalytic hydrogenation.

3-Carboxypropyl-Aminotetralin Derivatives And Related Compounds As Mu Opioid Receptor Antagonists

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US Patent:
8106232, Jan 31, 2012
Filed:
Dec 10, 2008
Appl. No.:
12/331659
Inventors:
Sean G. Trapp - San Francisco CA,
Michael R. Leadbetter - San Leandro CA,
Daniel D. Long - San Francisco CA,
John R. Jacobsen - San Mateo CA,
Priscilla Van Dyke - San Francisco CA,
Pierre-Jean Colson - San Francisco CA,
Miroslav Rapta - Sunnyvale CA,
Ying Yu - Sunnyvale CA,
Assignee:
Theravance, Inc. - South San Francisco CA
International Classification:
C07C 229/00
C07C 62/00
C07C 65/00
US Classification:
560 45, 562466
Abstract:
The invention provides 3-carboxypropyl-aminotetralin compounds of formula (I):.

Process For Preparing An Intermediate To Mu Opioid Receptor Antagonists

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US Patent:
8247559, Aug 21, 2012
Filed:
Mar 14, 2011
Appl. No.:
13/047309
Inventors:
Pierre-Jean Colson - San Francisco CA,
Ying Yu - Sunnyvale CA,
Daniel D. Long - San Francisco CA,
Ioanna Stergiades - San Francisco CA,
Assignee:
Theravance, Inc. - South San Francisco CA
International Classification:
C07D 451/02
US Classification:
546124
Abstract:
The invention provides an efficient method for preparing 3-endo-(8-azabicyclo[3. 2. 1]oct-3-yl)benzamide by hydrogenation, under controlled conditions, of an amino-protected 3-(8-azabicyclo[3. 2. 1]oct-2-en-3-yl)benzamide intermediate in which the amino-protecting group is removable by catalytic hydrogenation.
Ying Yu from Pleasanton, CA, age ~40 Get Report