Inventors:
Helmut Horst Tews - Poughkeepsie NY
Brian S. Lee - New York NY
Ulrike Gruening - Munich, DE
Raj Jammy - Wappingers Falls NY
John Faltermeier - LaGrange NY
Assignee:
Infineon Technologies AG - Munich
International Business Machines Corporation - Armonk NY
International Classification:
H01L 218242
US Classification:
438246, 438243, 438244, 438245, 438247, 438248, 438249, 438386, 438387, 438388, 438389, 438390, 438391, 438392
Abstract:
A method for growing a dielectric layer on a substrate, in accordance with the present invention, includes the steps of providing a substrate having at least two crystallographic planes which experience different dielectric layer growth rates due to the at least two crystallographic planes. A first dielectric layer is grown on the at least two crystallographic planes such that the first dielectric layer has a first thickness on a first crystallographic plane and a second thickness on a second crystallographic plane. The first thickness is thicker than the second thickness for the first dielectric layer. Dopants are implanted through the first dielectric layer. A greater number of dopants are implanted in the substrate through the second thickness than through the first thickness of the first dielectric layer. The first dielectric layer is then removed. A second dielectric layer is grown at a same location as the removed first dielectric layer.