Gottlieb S Oehrlein

7470329, Dec 30, 2008

Aug 9, 2004

10/913323

Gottlieb S. Oehrlein - Clarksville MD, US
Xuefeng Hua - Hyattsville MD, US
Christian Stolz - Baden-Wuerttemberg, DE

University of Maryland - College Park MD

C23C 16/00
C23F 1/00
H01L 21/306

118720, 1563453

A plasma processing system includes a source of plasma, a substrate and a shutter positioned in close proximity to the substrate. The substrate/shutter relative disposition is changed for precise control of substrate/plasma interaction. This way, the substrate interacts only with a fully established, stable plasma for short times required for nanoscale processing of materials. The shutter includes an opening of a predetermined width, and preferably is patterned to form an array of slits with dimensions that are smaller than the Debye screening length. This enables control of the substrate/plasma interaction time while avoiding the ion bombardment of the substrate in an undesirable fashion. The relative disposition between the shutter and the substrate can be made either by moving the shutter or by moving the substrate.

55499350, Aug 27, 1996

Jan 4, 1995

8/368764

Thao N. Nguyen - Katonah NY
Gottlieb S. Oehrlein - Yorktown Heights NY
Zeev A. Weinberg - White Plains NY

International Business Machines Corporation - Armonk NY

C08J 718
C23C 1414
H05H 100

427490

The adhesion between a polymeric fluorocarbon film and a substrate is improved by providing a thin layer of silicon or a silicide intermediate between the substrate and the polymeric fluorocarbon film, such that a region containing a high density of Si-C bonds is formed.

57888701, Aug 4, 1998

Nov 15, 1995

8/559766

Thao Ngoc Nguyen - Katonah NY
Gottlieb Stefan Oehrlein - Yorktown Heights NY
Zeev Avraham Weinberg - White Plains NY

International Business Machines Corporation - Armonk NY

B44C 122

216 63

The adhesion between a polymeric fluorocarbon film and a substrate is improved by providing a non-volatile carbide-forming metallic layer intermediate the substrate and the polymeric fluorocarbon film, and exposing the substrate to ion-bombardment in a noble gas/polymerizing gas atmosphere prior to providing the fluorocarbon films.

53024206, Apr 12, 1994

Jul 9, 1993

8/088533

Thao N. Nguyen - Katonah NY
Gottlieb S. Oehrlein - Yorktown Heights NY
Zeev A. Weinberg - White Plains NY

International Business Machines Corporation - Armonk NY

B05D 306

427490

Polymeric fluorocarbon layer is prepared by plasma enhanced chemical vapor deposition in a chamber, the walls of which are coated with a polymeric fluorocarbon film by introducing a gaseous polymerizable fluorocarbon into the chamber and applying radio-frequency at a power level of about 100 to about 1000 watts, employing a pressure of about 10 to 180 mTorr and a self-bias voltage of about -50 to about -700 volts. The polymeric fluorocarbon layer is about 0. 05 to about 5. mu. m thick, has a maximum dielectric constant of about 2. 5, has a C/F ratio of about 1:1 to about 1:3, is thermally stable at temperatures of at least about 350. degree. C. , and is substantially free from metallic contamination and oxygen.

51538130, Oct 6, 1992

Oct 31, 1991

7/785739

Gottlieb S. Oehrlein - Yorktown Heights NY
Gary W. Rubloff - Waccabuc NY

International Business Machines Corporation - Armonk NY

H01G 406
H01L 2978
H01L 2170

361313

The invention provides a method of increasing the capacitance of a capacitor which comprises forming a capacitor having a main vertical trench and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second silicon regions, for example n-doped and p-doped silicon regions. After a main vertical trench is dry etched through the first and second silicon regions, the etch characteristics of the alternating first and second silicon regions are utilized to selectively dry etch lateral trenches, thereby increasing the surface area of the capacitor and the capacitance of the capacitor. Capacitors produced by this method are also provided.

6060400, May 9, 2000

Mar 26, 1998

9/048848

Gottlieb S. Oehrlein - Voorheesville NY
Bernd Kastenmeier - Albany NY
Peter Matsuo - Albany NY

The Research Foundation of State University of New York - Albany NY

H01L 213065

438706

A dry etch process is described for removing silicon nitride masks from silicon dioxide or silicon for use in a semiconductor fabrication process. A remote plasma oxygen/nitrogen discharge is employed with small additions of a fluorine source. The gas mixture is controlled so that atomic fluorine within the reaction chamber is maintained at very low flows compared with the oxygen and nitrogen reactants. Parameters are controlled so that an oxidized reactive layer is formed above any exposed silicon within a matter of seconds from initiating etching of the silicon nitride. Etch rates of silicon nitride to silicon of greater than 30:1 are described, as well as etch rates of silicon nitride to silicon dioxide of greater than 70:1.

53957695, Mar 7, 1995

Jun 26, 1992

7/904729

Maurizio Arienzo - Chappaqua NY
David L. Harame - Mohegan Lake NY
Gottlieb S. Oehrlein - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 21302

437 7

The present invention is a structure and method for controlling the depth of an etching process. In particular, the method and structure of the present invention creates a marker layer which resides between a layer to be etched and a protected layer. The marker layer is detected during the etch process and the etch process is controlled based on the detection of the marker layer. The marker layer has physical characteristics which are very similar to the layers being etched or protected. The marker layer has a similar lattice constant and electrical behavior to either the etched layer or the protected layer. The marker layer has very different optical properties from the etched or protected layers so that even a thin marker layer can be easily detected using in-situ ellipsometric measurements. A specific embodiment of the present invention is a layer of SiGe interposed between a thick silicon layer and a thin silicon layer. In particular, the SiGe layer has a composition of approximately 10% of germanium and has a thickness of approximately 10. ANG.

52447308, Sep 14, 1993

Apr 30, 1991

7/693736

Thao N. Nguyen - Katonah NY
Gottlieb S. Oehrlein - Yorktown Heights NY
Zeev A. Weinberg - White Plains NY

International Business Machines Corporation - Armonk NY

B32B 2700
B05D 306

428336

Polymeric fluorocarbon layer is prepared by plasma enhanced chemical vapor deposition in a chamber, the walls of which are coated with a polymeric fluorocarbon film by introducing a gaseous polymerizable fluorocarbon into the chamber and applying radio-frequency at a power level of about 100 to about 1000 watts, employing a pressure of about 10 to 180 mTorr and a self-bias voltage of about -50 to about -700 volts. The polymeric fluorocarbon layer is about 0. 05 to about 5. mu. m thick, has a maximum dielectric constant of about 2. 5, has a C/F ratio of about 1:1 to about 1:3, is thermally stable at temperatures of at least about 350. degree. C. , and is substantially free from metallic contamination and oxygen.