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Darin S Hunzeker

from San Diego, CA
Age ~62

Darin Hunzeker Phones & Addresses

  • 7780 Pipit Ct, San Diego, CA 92129 (858) 538-3812
  • North Salt Lake, UT
  • Colorado Springs, CO
  • Mission Viejo, CA
  • Young America, MN
  • 7780 Pipit Pl, San Diego, CA 92129

Work

Position: Professional/Technical

Education

Degree: High school graduate or higher

Business Records

Name / Title
Company / Classification
Phones & Addresses
Darin Scott Hunzeker
President
CRES SD INC
Business Services at Non-Commercial Site
7780 Pipit Pl, San Diego, CA 92129
Darin Scott Hunzeker
Ds Hunzeker L.P
7780 Pipit Pl, San Diego, CA 92129

Publications

Us Patents

Reducing Lo Leakage In A Direct Conversion Receiver Quadrature Stage

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US Patent:
6766157, Jul 20, 2004
Filed:
Jan 3, 2001
Appl. No.:
09/754104
Inventors:
Darin Hunzeker - San Diego CA
Ralph Kaufman - La Mesa CA
Assignee:
Kyocera Wireless Corp. - San Diego CA
International Classification:
H04B 110
US Classification:
455317, 455316, 455318, 455325
Abstract:
An LO leakage canceller for a direct conversion receiver is disclosed. The canceller includes an RF input stage operating to provide at least two input signals, a local oscillator, an in-phase processor, and a quadrature processor. The local oscillator is configured to produce at least two reference signals for modulating the two input signals. Each of the in-phase and quadrature processors includes two consecutive quadrature splitters operating to substantially reduce leakage of the reference signal from the local oscillator to the RF input stage.

Capacitive Disk Probe

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US Patent:
54324572, Jul 11, 1995
Filed:
Jan 28, 1994
Appl. No.:
8/188283
Inventors:
Kenneth M. Mitzner - Torrance CA
Darin S. Hunzeker - Mission Viejo CA
William Hant - Los Angeles CA
Silvan S. Locus - Van Nuys CA
John C. Bryant - Los Alamitos CA
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
G01R 2726
G01R 3108
US Classification:
324690
Abstract:
A probe for measurement of an electrically conductive surface covered by an insulating cover layer has a pair of electrically conductive pads for capacitive coupling to the conductive surface. The pads may be formed by photolithography as part of a disk of a metallic layer disposed on a substrate of low dielectric material such as fibrous glass in an epoxy binder, the pads being separated by a relatively narrow gap. Included within the probe is an electrically insulating holder for supporting the substrate and the pads, the holder being configured to facilitate manual manipulation of the probe. The probe connects with a signal analyzer which provides a test signal coupled to the pads via a coaxial transmission line. During a sliding of the pads along the cover layer, electrical characteristics of a signal coupled capacitively via the pads to the conductive surface are analyzed by the analyzer to provide information on electrical continuity and resistivity of the surface.

High Efficiency Switched Gain Power Amplifier

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US Patent:
60609494, May 9, 2000
Filed:
Sep 22, 1998
Appl. No.:
9/158456
Inventors:
Ralph Kaufman - La Mesa CA
Darin Hunzeker - San Diego CA
Richard J. Camarillo - San Diego CA
Assignee:
Qualcomm Incorporated - San Diego CA
International Classification:
H03F 368
US Classification:
330 51
Abstract:
A power amplifier circuit arrangement including a power amplifier, and a bypass network for bypassing an RF-input signal around the power amplifier when excess gain and output power are not needed. When the bypass network is used, the power amplifier is turned off. A circulator connects the bypass network to the power amplifier output, thus removing the requirement of an output switch. The RF-input signal enters the circulator which routes the signal toward the output of the power amplifier. Because the amplifier is off, its output appears as a high impedance and reflects the signal back to the circulator. The circulator routes the reflected signal the signal output.

High Efficiency Switched Gain Power Amplifier

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US Patent:
62082027, Mar 27, 2001
Filed:
Feb 10, 1999
Appl. No.:
9/248048
Inventors:
Ralph E. Kaufman - La Mesa CA
Darin Hunzeker - San Diego CA
Richard J. Camarillo - San Diego CA
Assignee:
Qualcomm, Inc - San Diego CA
International Classification:
H03F1/14
US Classification:
330 51
Abstract:
A power amplifier circuit arrangement including a driver amplifier, a switch, an amplifier path having a band pass filter and a power amplifier, and a bypass path which bypasses the power amplifier when excess gain and output power are not needed. When an RF-analog signal from the driver amplifier is switched to the amplifier path, the signal is band-pass filtered and amplified. Then the signal is split into an in-phase and a quadrature signal. Either the in-phase or the quadrature signal is inverted and summed with the other of the in-phase or quadrature signal, and the summed signal is transmitted to an output port. When the RF-signal from the driver amplified is switched to the bypass path, the power amplifier is turned off and the bypass path directs the signal to the output of the power amplifier, which appears as a high impedance to the signal. The signal reflects off the power amplifier to the output port. This design preserves the benefits of bypassing the power amplifier by reducing the amount of switching loss introduced into the circuit.
Darin S Hunzeker from San Diego, CA, age ~62 Get Report